Infineon IRG4BC30UDPBF IGBT Module

Manufacturer Part Number: IRG4BC30UDPBF

Rohs Code: Yes

Manufacturer: Infineon TECHNOLOGIES AG

Package Description: FLANGE MOUNT, R-PSFM-T3

ECCN Code: EAR99

Case Connection: COLLECTOR

Collector Current-Max (IC): 23 A

Collector-Emitter Voltage-Max: 600 V

Configuration: SINGLE WITH BUILT-IN DIODE

Fall Time-Max (tf): 130 ns

Gate-Emitter Thr Voltage-Max: 6 V

Gate-Emitter Voltage-Max: 20 V

JEDEC-95 Code: TO-220AB

JESD-30 Code: R-PSFM-T3

Number of Elements: 1

Number of Terminals: 3

Operating Temperature-Max: 150 °C

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 100 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: THROUGH-HOLE

Terminal Position: SINGLE

Time

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3