#International Rectifier, #IRG7PH28UD1MPBF, #IGBT_Module, #IGBT, IRG7PH28UD1MPBF Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel; IRG7PH28UD1MPBF
Manufacturer Part Number: IRG7PH28UD1MPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.81Collector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 30 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 115 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel