#International Rectifier, #IRGP4660DPBF, #IGBT_Module, #IGBT, IRGP4660DPBF Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,; IRGP4660DPBF
Manufacturer Part Number: IRGP4660DPBFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 1.39Collector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 600 VFall Time-Max (tf): 46 nsGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 175 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 330 WRise Time-Max (tr): 56 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTime Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,