#International Rectifier, #IRGR4045DPBF, #IGBT_Module, #IGBT, IRGR4045DPBF Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMPLIANT, PLASTIC, D
Manufacturer Part Number: IRGR4045DPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 8.62Case Connection: COLLECTORCollector Current-Max (IC): 12 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 22 nsGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-252AAJESD-30 Code: R-PSSO-G2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 77 WRise Time-Max (tr): 15 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2