#IXYS, #IXFN180N15P, #IGBT_Module, #IGBT, IXFN180N15P Power Field-Effect Transistor, 150A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: IXFN180N15PPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 1.71Additional Feature: AVALANCHE RATED, UL RECOGNIZEDAvalanche Energy Rating (Eas): 4000 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 150 VDrain Current-Max (ID): 150 ADrain-source On Resistance-Max: 0.011 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 380 AQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 150A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4