IXYS IXFN61N50 IGBT Module

Manufacturer Part Number: IXFN61N50Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-D4Pin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.83Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 61 ADrain Current-Max (ID): 61 ADrain-source On Resistance-Max: 0.075 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-D4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 625 WPower Dissipation-Max (Abs): 625 WPulsed Drain Current-Max (IDM): 244 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4