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IXYS IXGH30N60C3C1 IGBT Module

IXGH30N60C3C1

#IXYS, #IXGH30N60C3C1, #IGBT_Module, #IGBT, IXGH30N60C3C1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3; IXGH30N6

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1755
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IXGH30N60C3C1 Specification

Sell IXGH30N60C3C1, #IXYS #IXGH30N60C3C1 Stock, IXGH30N60C3C1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3; IXGH30N60C3C1, #IGBT_Module, #IGBT, #IXGH30N60C3C1
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixgh30n60c3c1.html

Manufacturer Part Number: IXGH30N60C3C1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.16Case Connection: COLLECTORCollector Current-Max (IC): 60 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 220 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3

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