IXYS IXGH48N60B3C1 IGBT Module

IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

The A3-Class are optimized for low saturation voltage V(sat) and are well suited for applications requiring switching frequencies up to 5kHz. Similarly, the B3-Class offers low saturation voltages.

Features

• Optimized for low conduction and switching losses
• Square RBSOA
• International standard packages

Advantages

• High power density
• Low gate drive requirement

Applications

• Power Inverters
• UPS
• Motor Drives
• SMPS
• PFC Circuits
• Battery Chargers
• Welding Machines
• L amp Ballasts

Maximum ratings and characteristics

●Absolute maximum ratings (Tc=25°C unless without specified)

• Collector-Emitter voltage Vces:600V
• Gate-Emitter voltage VGES:±20V
• Collector current Ic Continuous Tc=25°C :75A
• Collector current Icp 1ms Icm=25°C :280A
• Collector power dissipation Pc:300W
• Operating junction temperature Tj:+150°C
• Storage temperature Tstg :-55 to +125°C
• Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300°C
• Plastic body for 10 seconds 260°C
• Mounting torque(TO-247 & TO-220) 1.13/10 Nm/lb.in.
• Weight TO-247 6.0 g