#IXYS, #IXGH50N60C4, #IGBT_Module, #IGBT, IXGH50N60C4 Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN; IXGH50N60C4
Manufacturer Part Number: IXGH50N60C4Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: TO-247, 3 PINPin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.8Case Connection: COLLECTORCollector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 306 nsTurn-on Time-Nom (ton): 75 ns Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN