#IXYS, #IXGP4N100, #IGBT_Module, #IGBT, IXGP4N100 IXYS Insulated Gate Bipolar Transistor, 8A 1000V, N-Channel, TO-220AB, TO-263, 3 PIN
IXGP4N100 Product details
Features
• International standard packages JEDEC TO-220AB and TO-263AA
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies
• Capacitor discharge
Advantages
• Easy to mount with one screw
• Reduces assembly time and cost
• High power density
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1000V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :8A
Collector current Icp 1ms Tc=25°C :16A
Collector power dissipation Pc:40W
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-55 to +125°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300°C
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight TO-220 4 g,