IXYS IXST35N120B IGBT Module

Manufacturer Part Number: IXST35N120BPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-268AAPackage Description: D3PAK-3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.84Case Connection: COLLECTORCollector Current-Max (IC): 70 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-268AAJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3