#IXYS, #IXXH100N60C3, #IGBT_Module, #IGBT, IXXH100N60C3 Insulated Gate Bipolar Transistor, 190A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXXH100N
Manufacturer Part Number: IXXH100N60C3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.64Collector Current-Max (IC): 190 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 830 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 220 nsTurn-on Time-Nom (ton): 95 ns Insulated Gate Bipolar Transistor, 190A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN