#IXYS, #IXXH30N65B4, #IGBT_Module, #IGBT, IXXH30N65B4 Insulated Gate Bipolar Transistor, 65A I(C), 650V V(BR)CES, N-Channel,; IXXH30N65B4
Manufacturer Part Number: IXXH30N65B4Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: ,Manufacturer: IXYS CorporationRisk Rank: 2.18Collector Current-Max (IC): 65 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 175 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 230 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 65A I(C), 650V V(BR)CES, N-Channel,