#IXYS, #IXXX160N65B4, #IGBT_Module, #IGBT, IXXX160N65B4 Insulated Gate Bipolar Transistor, 310A I(C), 650V V(BR)CES, N-Channel,; IXXX160N65B4
Manufacturer Part Number: IXXX160N65B4Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.23Collector Current-Max (IC): 310 ACollector-Emitter Voltage-Max: 650 VGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJESD-609 Code: e3Operating Temperature-Max: 175 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 940 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) Insulated Gate Bipolar Transistor, 310A I(C), 650V V(BR)CES, N-Channel,