#IXYS, #IXYX100N120C3, #IGBT_Module, #IGBT, IXYX100N120C3 Insulated Gate Bipolar Transistor, 188A I(C), 1200V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXYX100N120C3
Manufacturer Part Number: IXYX100N120C3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.2Additional Feature: AVALANCHE RATEDCase Connection: COLLECTORCollector Current-Max (IC): 188 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1150 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 265 nsTurn-on Time-Nom (ton): 122 ns Insulated Gate Bipolar Transistor, 188A I(C), 1200V V(BR)CES, N-Channel, PLUS247, 3 PIN