#Microsemi HI-REL [MIL], #JANTX2N6989, #IGBT_Module, #IGBT, JANTX2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass-Sealed, 14 Pin, H
Manufacturer Part Number: JANTX2N6989Rohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: SEMICOA CORPPart Package Code: DIPPackage Description: IN-LINE, R-GDIP-T14Pin Count: 14ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Semicoa SemiconductorsRisk Rank: 4.46Collector Current-Max (IC): 0.8 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 4 ELEMENTSDC Current Gain-Min (hFE): 30JESD-30 Code: R-GDIP-T14Number of Elements: 4Number of Terminals: 14Operating Temperature-Max: 200 °CPackage Body Material: CERAMIC, GLASS-SEALEDPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: NPNQualification Status: QualifiedReference Standard: MIL-PRF-19500/559Surface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14