#MITSUBISHI, #KC224575, #IGBT_Module, #IGBT, KC224575 Power Bipolar Transistor, 75A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, D22, 7 PIN; K
Manufacturer Part Number: KC224575Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.82Collector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 75Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 350 WQualification Status: Not QualifiedRise Time-Max (tr): 2500 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONVCEsat-Max: 2.5 V Power Bipolar Transistor, 75A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, D22, 7 PIN