MITSUBISHI KS524505 IGBT Module

Description:

The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The

modules are isolated, consisting of one Darlington Transistor with a reverse parallel connected high speed diode and base-to-emitter speed-up diode.

Features:

lsolated Mounting

Planar Chips

Discrete Fast Recovery

Feedback Diode

High Gain (hFE)

Base- Emitter Speed-up Diode

Applications:

Inverters

DC Motor Control

Switching Power Supplies

AC Motor Control

Absolute Maximum Ratings, T; = 25 °C unless otherwise specified

• Junction Temperature (Tj): -40°C to 150°C
• Storage Temperature (Tstg): -40°C to 125°C
• Collector-Emitter Sustaining Voltage (VCEOIsus): 450 Volts
• Collector-Emitter Sustaining Voltage (VBE = -2V) (VcEV(sus)): 600 Volts
• Collector-Base Voltage (Vcac): 600 Volts
• Emitter-Base Voltage (VεBo): 7 Volts
• Collector-Emitter Voltage (VcEv): 600 Volts
• Continuous Collector Current (Ic): 50 Amperes
• Diode Forward Current (IFM): 50 Amperes
• Continuous Base Current (lg): 3 Amperes
• Diode Surge Current (IFSM): 500 Amperes
• Power Dissipation (P): 310 Watts
• Max. Mounting Torque M5 Terminal Screws: 17 in.-lb.
• Max. Mounting Torque M6 Mounting Screws: 26 in.-lb.
• Module Weight (Typical): 90 Grams
• Isolation Voltage (VAMS): 2000 Volts