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Power Integrations LQA10N200C IGBT Module

LQA10N200C

#Power Integrations, #LQA10N200C, #IGBT_Module, #IGBT, LQA10N200C Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-252, DPAK-3/2; LQA10N200C

· Categories: IGBT Module
· Manufacturer: Power Integrations
· Price: US$
· Date Code: Contains lead / RoHS Compliant
. Available Qty: 1024
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LQA10N200C Specification

Sell LQA10N200C, #Power Integrations #LQA10N200C Stock, LQA10N200C Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-252, DPAK-3/2; LQA10N200C, #IGBT_Module, #IGBT, #LQA10N200C
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/lqa10n200c.html

Manufacturer Part Number: LQA10N200CRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: POWER INTEGRATIONS INCPackage Description: R-PSSO-G2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Power IntegrationsRisk Rank: 1.68Additional Feature: FREE WHEELING DIODE, PD-CASE, SOFT FACTOR IS 0.44Application: EFFICIENCYCase Connection: CATHODEConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.1 VJEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 2Non-rep Pk Forward Current-Max: 60 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 5 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPower Dissipation-Max: 27.7 WRep Pk Reverse Voltage-Max: 200 VReverse Current-Max: 250 µAReverse Recovery Time-Max: 0.0139 µsSurface Mount: YESTechnology: SCHOTTKYTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-252, DPAK-3/2

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