#HITACHI, #MBM150GS6AW, #IGBT_Module, #IGBT, MBM150GS6AW Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,; MBM150GS6AW
Manufacturer Part Number: MBM150GS6AWPart Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Hitachi LtdRisk Rank: 5.14Additional Feature: HIGH SPEED, LOW NOISECase Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 450 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 600 nsTurn-on Time-Nom (ton): 300 nsVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,