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HITACHI MBM150GS6AW IGBT Module

MBM150GS6AW

#HITACHI, #MBM150GS6AW, #IGBT_Module, #IGBT, MBM150GS6AW Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,; MBM150GS6AW

· Categories: IGBT Module
· Manufacturer: HITACHI
· Price: US$
· Date Code: 11+
. Available Qty: 285
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MBM150GS6AW Specification

Sell MBM150GS6AW, #HITACHI #MBM150GS6AW Stock, MBM150GS6AW Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,; MBM150GS6AW, #IGBT_Module, #IGBT, #MBM150GS6AW
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URL: https://www.slw-ele.com/mbm150gs6aw.html

Manufacturer Part Number: MBM150GS6AWPart Life Cycle Code: TransferredIhs Manufacturer: Hitachi LTDPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Hitachi LtdRisk Rank: 5.14Additional Feature: HIGH SPEED, LOW NOISECase Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 450 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 600 nsTurn-on Time-Nom (ton): 300 nsVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,

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