#GeneSiC Semiconductor, #MBR600100CT, #IGBT_Module, #IGBT, MBR600100CT 100V 600A Silicon Schottky Rectifier in Twin Tower Package; MBR600100CT
Manufacturer Part Number: MBR600100CTPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: GENESIC SEMICONDUCTOR INCPackage Description: R-PUFM-X2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: GeneSic Semiconductor IncRisk Rank: 2.1Application: POWERCase Connection: CATHODEConfiguration: COMMON CATHODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 0.84 VJESD-30 Code: R-PUFM-X2Non-rep Pk Forward Current-Max: 4000 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 300 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 100 VReverse Current-Max: 1000 µASurface Mount: NOTechnology: SCHOTTKYTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime 100V 600A Silicon Schottky Rectifier in Twin Tower Package