#IXYS, #MCD310_16io1, #IGBT_Module, #IGBT, Silicon Controlled Rectifier, 500A I(T)RMS, 320000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-5
Features
. International standard package
. Direct copper bonded Al2O3 -ceramicbase plate
. Planar passivated chips
. Isolation voltage 3600 V
Applications
. Motor control
. Heat and temperature control forindustrial furnaces and chemicalprocesses
. Lighting control
. Contactless switchesAdvantages
. Space and weight savings
. Simple mounting
. Improved temperature and powercycling
. Reduced protection circuits
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current IFRM:500A
IFSMVR = 0t = 8.3 ms (60 Hz), sine: 400A
VISOL50/60 Hz, RMSt = 1 min :3000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 2.5~3.5 N·m
Weight Typical including screws 320g