IXYS MDD95-12N1B IGBT Module

IXYS MDD95-12N1B is a high-power dual diode module designed for use in rectifiers, DC power supplies, & motor drives. It consists two diodes rated for 1200V & 95A, with maximum forward voltage drop of 1.7V.

MDD95-12N1B designed for high reliability and performance, with low forward voltage drop & low leakage current. Its compact size & high power density make it ideal for use in applications where space is limited.

MDD95-12N1B designed to be easy to use and integrate into existing systems, with compact & robust package that can withstand high thermal & mechanical stress. It includes over-current and over-temperature protection.

MDD95-12N1B Features / Advantages:

● Package with DCB ceramic

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

Applications:

● Diode for main rectification

● For single and three phase bridge configurations

● Supplies for DC power equipment

● Input rectifiers for PWM inverter

● Battery DC power supplies

● Field supply for DC motors

Package TO-240AA

● Isolation Voltage: 3600V

● Industry standard outline

● RoHS compliant

● Height: 30 mm

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Max.non-repetitive reverse blocking voltage Vrsm 1300V

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:120A

Collector current Icp:240A

Collector power dissipation Pc:481W

Collector-Emitter voltage VCES:3600V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Weight 76g