#IXYS, #MDI150_12A4, #IGBT_Module, #IGBT, MDI150-12A4 Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MDI150-12A4
Manufacturer Part Number: MDI150-12A4Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X5Pin Count: 7Manufacturer: IXYS CorporationRisk Rank: 5.71Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 180 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 830 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7