IXYS MEO450-12DA(H) IGBT Module

Features

. International standard package with DCB ceramic base plate

. Planar passivated chips

. Short recovery time

. Low switching losses

. Soft recovery behaviour

. Isolation voltage 3600 V

Applications

. Antiparallel diode for high frequencyswitching devices

. Free wheeling diode in convertersand motor control circuits

. Inductive heating and melting

. Uninterruptible power supplies (UPS)

. Ultrasonic cleaners and welders

Advantages

. High reliability circuit operation

. Low voltage peaks for reducedprotection circuits

. Low noise switching

. Low losses

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-emitter voltage Tvj = 25°C,VCES 1200 V

Continuous DC collector current 453A

Repetitive peak collector currentt ICRM 900A

Total power dissipation Ptot 1750 W

Gate-emitter peak voltage VGES +/-20V

Temperature under switching conditions Tvj op-40~150°C

Weight 150g