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IXYS MEO500-06DA IGBT Module

#IXYS, #MEO500_06DA, #IGBT_Module, #IGBT, Rectifier Diode 1 Phase 1 Element 514A 600V V(RRM) Silicon MODULE-2;

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$ 30
· Date Code: 2021+
. Available Qty: 599
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MEO500-06DA Specification

Sell MEO500-06DA, #IXYS #MEO500-06DA Stock, Rectifier Diode 1 Phase 1 Element 514A 600V V(RRM) Silicon MODULE-2; , #IGBT_Module, #IGBT, #MEO500_06DA
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/meo500-06da.html

The MEO500-06DA is IXYS Made high-quality rectifier diode. This diode(MEO500-06DA) is single phase, single element module designed to handle high output currents (up to 514A) and voltage (up to 600V).

MEO500-06DA features low forward 1.52V voltage, short recovery time, making the diode suitable for fast recovery applications.

One of MEO500-06DA key features is the high reliability, low noise, and soft recovery behavior.

The diode comes in an international standard package with DCB ceramic base plate and planar passivated chips.

The MEO500-06DA is great choice for high power rectification in industries such as power electronics, telecommunications, and transportation.

Manufacturer Part Number: MEO 500-06 DA

.International standard packagewith DCB ceramic base plate

Planar passivated chips

Short recovery time

Low switching losses

Soft recovery behaviour

Isolation voltage 3600 V~

Additional Feature: HIGH RELIABILITY, LOW NOISE, FREE WHEELING DIODE

Application: FAST RECOVERY

Case Connection: ISOLATED

Configuration: SINGLE

Diode Element Material: SILICON

Diode Type: RECTIFIER DIODE

Forward Voltage-Max (VF): 1.52 V

JESD-30 Code: R-XUFM-X2

Non-rep Pk Forward Current-Max: 4800 A

Operating Temperature-Max: 150 °C

Operating Temperature-Min: -40 °C

Output Current-Max: 514 A

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Power Dissipation-Max: 1100 W

Rep Pk Reverse Voltage-Max: 600 V

Reverse Current-Max: 24000 µA

Reverse Recovery Time-Max: 0.25 µs

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