#TOSHIBA, #MG100H2DL2, #IGBT_Module, #IGBT, MG100H2DL2 TRANSISTOR 100 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-98C1A, 6 PIN, BIP General Purpose Power; MG1
Manufacturer Part Number: MG100H2DL2Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: FLANGE MOUNT, R-PUFM-X6Pin Count: 6Manufacturer: Toshiba America Electronic ComponentsRisk Rank: 5.75Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 550 VConfiguration: 2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PUFM-X6Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON TRANSISTOR 100 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-98C1A, 6 PIN, BIP General Purpose Power