Toshiba MG100J2YS1 IGBT Module

#MG100J2YS1 Description

MG100J2YS1 IGBT Intelligent Module; TRANSISTOR MODULE; 25A/1200V/2unit

MG100J2YS1  0.45 lbs

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:100A

Collector current Icp:200A

Collector power dissipation Pc:450W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.3 *1 N·m

2IGBT: 100A600V