Toshiba MG100J6ES50 IGBT Module

Toshiba MG100J6ES50 is silicon N-channel IGBT module(Insulated Gate Bipolar Transistor), designed for high power switching and motor control applications.

MG100J6ES50 contains six IGBTs built into apackage, providing compact and efficient solution for high power applications.

MG100J6ES50 features high input impedance and designed with an isolated electrode from the case, which improves safety and reduces the risk of electrical shock.

MG100J6ES50 also designed with enhancement-mode IGBTs, which allow for improved performance and efficiency compared to depletion-mode IGBTs.

Toshiba MG100J6ES50 designed for high-speed operation, with a maximum turn-off time (tf) of 0.30µs and maximum reverse recovery time (trr) of 0.15µs when operated at current of 100A. The module also has low saturation voltage (VCE (sat)) of 2.70V when operated at current of 100A.

High Power Switching Applications

Motor Control Applications

The electrodes are isolated from case.

High input impedance.

6 IGBTs built into 1 package.

Enhancement-mode.

High speed : tf = 0.30µs (Max) (IC = 100A)

trr = 0.15µs (Max) (IF = 100A)

Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 100A)

IGBT: 100A600V; Toshiba GTR Module Silicon N Channel IGBT. MG100J6ES50. High Power Switching Applications. Motor Control