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Toshiba MG100J7CSAOA IGBT Module

#Toshiba, #MG100J7CSAOA, #IGBT_Module, #IGBT, Toshiba gtr module silicon N channel IGBT 600V 100A

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$ 40
· Date Code: 2022+
. Available Qty: 289
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MG100J7CSAOA Specification

Sell MG100J7CSAOA, #Toshiba #MG100J7CSAOA Stock, Toshiba gtr module silicon N channel IGBT 600V 100A, #IGBT_Module, #IGBT, #MG100J7CSAOA
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The Toshiba MG100J7CSAOA module, which is a high-power switching device designed for motor control applications.

  • General Information:
    • The module contains 7 IGBTs (Insulated Gate Bipolar Transistors) integrated into a single package.
    • The module is an N-channel IGBT, which means it uses a negative voltage on the gate terminal to control current flow between the collector and emitter terminals.
    • The electrodes (terminals) of the module are isolated from the case, providing electrical isolation.
    • The module is designed for high-speed switching applications.

  • Electrical Characteristics:
    • Collector-Emitter Saturation Voltage (VCE(sat)): The maximum voltage drop across the collector and emitter terminals when the collector current (IC) is 100 A is 2.5 V or lower.
    • Fall Time (tf): The time required for the collector current to fall from the specified value to 10% of that value when the IC is 100 A is 0.5 µs or lower.
    • Reverse Recovery Time (trr): The time required for the reverse current to decay to 10% of its peak value when the forward current (IF) is 100 A is 0.3 µs or lower.

  • Maximum Ratings (at 25°C):
    • Collector-Emitter Voltage (Vces): The maximum voltage that can be applied between the collector and emitter terminals is 600 V.
    • Gate-Emitter Voltage (VGES): The maximum voltage that can be applied between the gate and emitter terminals is ±20 V.
    • Collector Current (DC, Ic): The maximum continuous collector current is 100 A.
    • Collector Current (1 ms): The maximum collector current that can be handled for a pulse duration of 1 ms is 200 A.
    • Collector Power Dissipation (TC = 25°C, PC): The maximum power dissipation that the module can handle while maintaining a case temperature of 25°C is 300 W.
    • Isolation Voltage (AC, Visol): The voltage that can be applied between the module's case and the internal circuit without causing electrical breakdown is 2500 V for one minute.
    • Junction Temperature (Tj): The maximum allowable temperature of the junction is +150°C.
    • Storage Temperature Range (Tstg): The recommended range of temperatures for storing the module is from -40°C to +125°C.
    • Screw Torque: The recommended torque for screwing the module onto a surface is 3 to 3.5 N·m.

    Please note that the weight of the module is specified as approximately 520 g (typical).

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