Toshiba MG100J7KS50 IGBT Module

TOSHIBA GTR Module Silicon N Channel IGB T MG100J7KS50 High Power Switching Appl ications Motor Control Applications MG100J7KS50 Unit: mm

. The electrodes ar e isolated from case.

. High input impe dance

. 7 IGBTs built into 1 package.

. Enhancement-mode

. High speed type IGB T :

:VCE (sat) = 2.5 V(max) (@IC = 100 A)

: tf = 0.5 µs (max) (@IC = 100 A)

: trr = 0.3 µs (max) (@IF = 100 A)

Equ ivalent Circuit JEDEC JEITA TOSHIBA We ight: 520g (typ.)

Inverter Stage Maximum Rati ngs (Ta = 25°C)

Characteristics Coll ector-emitter voltage Gate-emitter vol tage Collector curre .

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current DC, Ic : 50A

Collector current 1ms Tcp 100A

Collector Power Dissipation TC=25 °C PC 300W

Isolation Voltage AC :1 min Visol :2500V

junction temperature Tj:+150°C

Storage temperature Range Tstg :-40 to +125°C

screw torque 3/3 N·m