Toshiba MG100Q2YS11 IGBT Module

MG100Q2YS11 Description

GTR Module

Silicon N Channel IGBT

High Power Switching Applications

Motor Control Applications

Features

High input impedance

●High speed:

Low saturation:tr= 1.0μs (Max.) tπ= 0.5μs (Max.) VCE (sat)= 2.7V (Max.)

Enhancement mode

The electrodes are isolated from case

Includes a complete half bridge card in one package

aximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :100A

Collector current Icp 1ms Tc=25°C :200A

Collector power dissipation Pc:800W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3/3 N·m