Toshiba MG100Q2YS42 IGBT Module

MG100Q2YS42 Description

High Power Switching Applications Motor Control Applications

.High input impedance

.High speed : tf = 0.5µs (Max)

                     trr = 0.5µs (Max)

.Low saturation voltage: VCE (sat) = 4.0V (Max)

.Enhancement-mode

.Includes a complete half bridge in one package.

.The electrodes are isolated from case.

Collector-emitter voltage VCES 1200 V

Gate-emitter voltage VGES ±20 V

Collector current DC IC 100 A

Collector current 1ms ICP 200 A

Forward current DC IF 100 A

Forward current 1ms IFM 200 A

Collector power dissipation (Tc = 25°C) PC 700 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −40 ~ 125 °C

Isolation voltage VIsol (AC 1 min.) 2500 V

Screw torque (Terminal / mounting)  3 / 3 N·m

Gate leakage current IGES VGE = ±20V, VCE = 0  ±20 µA

Collector cut-off current ICES VCE = 1200V, VGE = 0 2.0 mA

Gate-emitter cut-off voltage VGE (off) IC = 100mA ,VCE = 5V 3.0  6.0 V

Collector-emitter saturation voltage VCE (sat) IC = 100A, VGE = 15V  3.0 4.0 V

High Power Switching Applications Motor Control Applications 2IGBT: 100A,1200V