#TOSHIBA, #MG150G2YL1, #IGBT_Module, #IGBT, MG150G2YL1 Toshiba TRANSISTOR 15A, 900V POWER TRANSISTOR
Feature
Electrodes are isolated from the heat sink (2500V AC).
High DC current Gain (hfe) (80 or 100 MIN). '
Low saturation voltage (2 or 2.5V maximum).
Wide safe operating area.
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:900V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :15A
Collector current Icp 1ms Tc=25°C :30A
Max, Tj 150°C
Storage Temp. Range -40/+125*C
Isolation Voltage 2500V (AC 1 minute)
Mounting screw torque 2.0~3.0 N·m