#TOSHIBA, #MG150H2YL1, #IGBT_Module, #IGBT, MG150H2YL1 TRANSISTOR 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-96A1A, 9 PIN, BIP General Purpose Power; MG1
Manufacturer Part Number: MG150H2YL1Part Life Cycle Code: ObsoleteIhs Manufacturer: Toshiba CORPPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 9Manufacturer: Toshiba America electronic ComponentsRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 550 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 80JESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON TRANSISTOR 150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-96A1A, 9 PIN, BIP General Purpose Power