Toshiba MG150J1BS11 IGBT Module

MG150J1BS11 Product details

High Power Switching Applications

Motor Control Applications

● High Input Impedance

● High Speed : tf=1.0μs (Max.) (Ic=150A)

● Low Saturation Voltage: VCE (sat)=2.7V (Max.) (Ic=150A)

● Enhancement-mode

● The electrodes are isolated from case.

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :150A

Collector current Icp 1ms Tc=25°C :300A

Collector power dissipation Pc:450W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2/3 N·m