Toshiba MG150J7KS50 IGBT Module

#MG150J7KS50.The electrodes are isolated from case.

.High input impedance

.7 IGBTs built into 1 package.

.Enhancement-mode

.High speed type IGBT :  Inverter stage

:   VCE(sat) = 2.8V (max) (@IC = 150A)

:  tf = 0.5μs (max) (@IC = 150A)

:  trr = 0.3μs (max) (@IF = 150A)

.Outline                        :Toshiba  2-110A1B

.Weight: 520g

Collector-emitter voltage VCES 600 V

Gate-emitter voltage VGES ±20 V

Collector current  DC IC 150 A

Collector current 1ms Icp 300 A

Collector power dissipation (Tc = 25°C)  PC 320 W

Junction temperature Tj150 °C

Storage temperature range Tstg−40 ~ 125 °C

Isolation voltage VIsol2500 (AC 1 min.) V

Screw torque (Terminal / mounting) 3/3 N.m

High Power Switching Applications Motor Control Applications 150A/600V/IGBT/7U