Toshiba MG150Q2YS50 IGBT Module

MG150Q2YS50 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS), Toshiba

Collector-emitter voltage Vces=1200V

Gate-emitter voltage Vges=±20V

Collector current DC IC=200 / 150A  VCE = 5V

Collector current 1ms ICP=400/300A

Forward current DC IF=150A

Forward current 1ms IFM=300A

collector power dissipation(Tc = 25°C) PC=1250W

Junction temperature Tj=150°C

Storage temperature range Tstg=−40 ~ 125 °C

Isolation voltage VIsol=2500V

Screw torque (Terminal / mounting)= 3/3 N·m