TOSHIBA MG15Q2YK1 IGBT Module

TOSHIBA TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly simplify mounting. A wide variety of devices are available with current capability up to 400A and voltage rating up to 1400V.

FEATURES

1. Electrodes are isolated from the heat sink (25oov AC).

2. High DC current Gain (h, (80 or 100 MIN).

3. Low saturation voltage (2 or 2.5V maximum).

4. Wide safe operating area.

DESIGNATION CODE

Modules are specified by a type number using the format shown below to indicate the characteristics.

VCES Collector-Emitter Voltage 1200V

VGES Gate-Emitter voltage:±20V

±lc Collector Current Tc= 25°C 50A

±ICP Collector Current (Peak) TC= 25°C 100A

Collector current Ic Continuous Tc=80°C :75A

Collector current Icp 1ms Tc=80°C :150A

PC Collector Dissipation TC= 25°C 400W

Tj Junction Temperature -20~+100°C

Tstg Storage Temperature -40~+125°C

Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V