Name: Toshiba MG15Q6ES1 IGBT_Module
Brand: Toshiba
SKU: MG15Q6ES1
Price: 48 USD
Availability: InStock

#Toshiba, #MG15Q6ES1, #IGBT_Module, #IGBT, Tpshiba gte midule silicon n channel 6 IGBTs Built Into 1 Package

· Categories: IGBT Module

· Manufacturer: Toshiba

· Price: US$ 48

· Date Code: 2021

. Available Qty: 367

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Tags: 1200v mg150 n-channel toshiba

MG15Q6ES1 Specification

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Toshiba igbt Features

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:15A

Collector current Icp:30A

Collector power dissipation Pc:145W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 6 N·m

Weight 185g

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