Sell TOSHIBA MG15Q6ES50A IGBT Module

#TOSHIBA, #MG15Q6ES50A, #IGBT_Module, #IGBT, MG15Q6ES50A Toshiba high power gtr module silicon n channel IGBT 15A 1200V

· Categories: IGBT Module

· Manufacturer: TOSHIBA

· Price: US$

· Date Code: 2024+

. Available Qty: 400

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Tags: 1200v 15a high-power igbt mg15q toshiba

MG15Q6ES50A Specification

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MG15Q6ES50A Description HIGH POWER SWITCHING APPLICATIONS MODULE

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :25A

Collector current Icp 1ms Tc=25°C :50A

Collector current Ic Continuous Tc=80°C :15A

Collector current Icp 1ms Tc=80°C :30A

Collector power dissipation Pc:145W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 6 N·m

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TOSHIBA MG15Q6ES50A IGBT Module

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MG15Q6ES50A Specification

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