Toshiba MG200H1AL2 IGBT Module

MG200H1AL2 Description

TRANSISTOR MODULE; 200 Amp; 450 Volt; 210 g.MG200H1AL2  0.46 lbs

Target_Applications

MG200H1AL2 could be used in High Power Switching Applications Motor Control Applications

Features

NPN, Si, POWER TRANSISTOR

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:200A

Collector current Icp:400A

Collector power dissipation Pc:800W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.0/3.5 *1 N·m

IGBT Module 200A/450V/GTR/2U