Toshiba MG200J2YS50 IGBT Module

#MG200J2YS50 Description

High Power Switching Applications Motor Control Applications

.The electrodes are isolated from case.

.High input impedance

.Includes a complete half bridge in one package.

.Enhancement-mode

.High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A)

.Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A)

Collector-emitter voltage VCES 600 V

Gate-emitter voltage VGES ±20 V

Collector current DC IC 200A

Collector current 1ms ICP 400 A

Forward current DC IF 200A

Forward current 1ms IFM 400 A

Collector power dissipation (Tc = 25°C) PC 900 W

Junction temperature Tj 150 °C

Storage temperature range Tstg −40 ~ 125 °C

Isolation voltage VIsol 2500 (AC 1 min.) V

Screw torque (Terminal / mounting) ― 3 / 3 N·m

IGBT: 200A600V