Toshiba MG200Q1US1 IGBT Module

MG200Q1US1 Description

GTR Module: Silicon N-Channel IGBT; 200 Amp; 1200 Volt

MG200Q1US1  0.74 lbs

Target_Applications

MG200Q1US1 could be used in High Power Switching / Motor Control Applications

High Input Impedance

High Speed : tf=0.5μs (Max.) trr=0.5μs (Max.)

Low Saturation Voltage:VCE(sat)=4.0V (Max.)

Enhancement-Mode

The Electrodes are Isolated from Case.

Maximum ratings(Tc=25°C )

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :200A

Collector current Icp 1ms Tc=25°C :400A

Collector power dissipation Pc:1400W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque M4/M6 2/3 N·m