#Toshiba, #MG300G1UL1, #IGBT_Module, #IGBT, MG300G1UL1 Toshiba GTR MODULE SILICON N CHANNEL IGBT 600V 300A
HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
The Electrodes are Isolated from Case.
High Input Impedance
Includes a Complete Half Bridge in One Package.
Enhancement-Mode
High Speed : tf=0.30μs (MAX.) (IC=300A) trr=0.15μs (MAX.) (Ir=300A)
Low Saturation Voltage : VCE(sat)=2.70V (MAX.) (IC=300A)
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:1300W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3 N·m