#Toshiba, #MG300Q2YS60A, #IGBT_Module, #IGBT, MG300Q2YS60A Toshiba IGBT Module Silicon N Channel IGBT 300A 1200V
MG300Q2YS60A Product details
High Power Switching Applications
Motor Control Applications
● Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
● The electrodes are isolated from case.
● Low thermal resistance
● VCE (sat) = 2.4 V (typ.)
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :300A
Collector current Icp 1ms Tc=25°C :600A
Collector power dissipation Pc:2800W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3 N·m