Toshiba MG30G1BL2 IGBT Module

MG30G1BL2 Description

MG30G1BL2 POWER TRANSISTOR MODULE; 30 Amp; 600 Volt

Target_Applications

MG30G1BL2 could be used in High Power Switching / Motor Control Applications

Features

POWER TRANSISTOR MODULE

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:450V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :30A

Collector current Icp 1ms Tc=25°C :60A

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C