Toshiba MG30G6EL2 IGBT Module

MG30G6EL2 Description

Target_Applications

MG30G6EL2 could be used in High Power Switching / Motor Control Applications

HIGH POWER SWITCHING APPLICATIONS.MOTOR CONTROL APPLICATIONS.

FEATURES:

The Collector is Isolation from Case.

6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package.

High DC Current Gain: hfe=100(Min.) (Ic=30A)

Low Saturation Voltage:VcE(sat)=2.0V(Max.) (Ic=30A)

High Speed : tf*3μs(Max.) (Ic=30A)

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :30A

Collector current Icp 1ms Tc=25°C :60A

Collector power dissipation Pc:200W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 30 N·m