Toshiba MG40001US41 IGBT Module

Features

HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

High Input Impedance

High Speed:tf=0.5μs (Max.) trr=0.5μs (Max.)

Low Saturation Voltage: VCE(sat)=4.0V (Max.)

Enhancement-Mode

The Electrodes are Isolated from Case.

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :400A

Collector current Icp 1ms Tc=25°C :800A

Collector power dissipation Pc:2400W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.0 N·m