#, #MG400J1US51, #IGBT_Module, #IGBT, MG400J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT 600V 400A
MG400J1US51 Features
HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
High Input Impedance
Includes a Complete Half Bridge in One Package.
Enhancement-Mode
High Speed :
tf=0.30μs (Max.) (IC=400A)
trr=0.15μs(Max.) (Ir=400A)
Low Saturation Voltage: VCE (sat)=2.70V (Max.) (Ic=400A)
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :400A
Collector current Icp 1ms Tc=25°C :800A
Collector power dissipation Pc:1500W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.0 N·m